Barinov V., et al. Ultra-large integrated memory circuits. In Russian

Barinov V., et al. Ultra-large integrated memory circuits. In Russian /Barinov V., i dr. Sverkhbol'shie integral'nye mikroskhemy operativnykh zapominayushchikh ustroystv. M Radio and Communications 1991. Issues of design, manufacture and application of ultra-large integrated circuits (SBIS) of operational storage devices (RAM) are considered in the book. Features of development of static and dynamic RAM on bipolar and TIR transistors are described, possibilities and prospects of arsenide-gallium RAM are described. Structural and principal electrical circuits are described, characteristics of chips produced by the industry are described. Methods of calculating and optimizing parameters, increasing the reliability of SBIS RAM and memory modules on their basis are considered. Please contact us for details on condition of available copies of the book. SKUalb8c0ee6d693c3d3f6.